Employs an electrical method to obtain the temperature rise and thermal resistance values of each material layer in the thermal path by measuring the transient junction temperature changes (structural function).

Supports a wide range of measurement targets, including Diode, LED, LD, BJT, IGBT, HEMT, VDMOS, SiC MOSFET, etc., with the ability to provide "one-on-one" customized services for specific user applications.

User-friendly interface with automated measurement process; uses an innovative dynamic temperature coefficient measurement method, increasing measurement speed by more than 10 times compared to traditional methods; high accuracy, non-destructive to the tested devices; certified by third-party.

Complies with JEDEC JESD51-1, GB/T 4023-1997, MIL-STD-750 and other domestic and international standards.